Study of hydrogen etch on non-polor and N-face GaN
碩士 === 國立交通大學 === 電子物理系所 === 103 === Although it is well-known effect that hydroden can increase the deposition rate of GaN, most studies focus on the role of it as a carrier gas during epitaxial growth. Studies of hydrogen etch are therefore scarce. In this work, we systematically analyzed the etch...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/41889718225866399610 |