Study of hydrogen etch on non-polor and N-face GaN

• Main Authors: Yang, Chi-chang, 楊其昌
• Other Authors: Lee, Wei-I
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/41889718225866399610

碩士 === 國立交通大學 === 電子物理系所 === 103 === Although it is well-known effect that hydroden can increase the deposition rate of GaN, most studies focus on the role of it as a carrier gas during epitaxial growth. Studies of hydrogen etch are therefore scarce. In this work, we systematically analyzed the etching behavior of hydrogen on GaN, and found it produce various strutures depending on the conditions. Among the etching parameters, temperature and pressure are the most dominative determining the morphology, but their tendencies are opposite. If the temperature is fixed, a high-pressure hydrogen etch will produce a surface decorated by Bubble-like GaN ; in contrast, a low-pressure etch will produce a cavity-ridden surface. On the other hand, modulating temperature can also obtain similar results.