Characterizations of ZnON Film Transisitors with various N2 flows

• Main Authors: Liu, Han-Kai, 劉瀚凱
• Other Authors: Chin, Albert
• Format: Others
• Language: en_US
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/v7954z

碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === With the rapid development of active-matrix flat panel displays (AMFPDs), thin film transistor (TFT) technologies have been widely used for display application. However, the traditional Si TFTs using amorphous silicon and poly-crystalline silicon as active channel layer face difficulties due to physical drawback properties. We have investigated the performance oxide thin film transistors with an amorphous zin oxynitride and different gas flow. The a-ZnON has been recognized as an ideal TFT material for channel which having high mobility, high on/off ratio, and process availability at room temperature. To meet the requirements of low power applications and improve the TFT device performance, low operation voltage with low threshold voltage (Vt) and small sub-threshold swing (S.S) are needed. To address these concerns, incorporating high-k gate dielectric and different gas flow into TFT provides an alternative solution to achieve these goals.