| Summary: | 碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === In this thesis, we success in using Smart CutTM to fabricate high quality germanium thin film on insulator(GeOI) substrate. We use proton ion implantation following with direct bonding on the glass substrate. And use thermal annealing to cut the thin film from Ge substrate. Then we used four-terminal structure to fabricate the device of spin injection and detection. Using the four-terminal structure device with ferromagnetic metal-oxide- semiconductor structure to inject spin carriers and using Hanle effect to detect the spin signal.
In this thesis, I will mention fabrication process parameters and the method of measurement. In the last part I will discuss the basic characterization of four-terminal device. In the end, we got the carrier mobility in germanium thin film by hall effect. The proposed structure can be simply measured the spin signal, therefore, it can be used to study the characteristics of spin polarized carriers in semiconductors. We success in measuring the Hanle effect signal and obtain higher Spin lifetime at room temperature (160 ps for N-type and 33 ps for P-type).
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