GaSb-based Type-I InGaAsSb/AlGaAsSb Quantum Wells and Their Applications to Mid-Infrared Lasers
博士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === In this dissertation we studied the growth and material properties of GaSb-based type-I InGaAsSb/AlGaAsSb quantum wells (QWs) and their applications to mid-infrared (mid-IR) opto-devices. We developed a molecular beam epitaxy (MBE) growth technique that cou...
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| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/17504636723201491616 |