A New Methodology on the Investigation of Dielectric Breakdown in High-K Metal-Gate CMOS Devices

碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === High k materials such as Hafnium dioxide are being used as next generation CMOS gate dielectric. Conventional SiO2 or SiON dielectric has its limits in CMOS scaling: inevitable leakage current for thinner oxide. With the help of high k materials, the gate o...

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Main Authors: Lu, Pin-Yi, 呂品毅
Other Authors: 莊紹勳
Format: Others
Language:en_US
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/f97z4u
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spelling ndltd-TW-103NCTU54280362019-05-15T21:50:56Z http://ndltd.ncl.edu.tw/handle/f97z4u A New Methodology on the Investigation of Dielectric Breakdown in High-K Metal-Gate CMOS Devices 探討金屬高介電層互補式金氧半電晶體崩潰的新穎方法 Lu, Pin-Yi 呂品毅 碩士 國立交通大學 電子工程學系 電子研究所 103 High k materials such as Hafnium dioxide are being used as next generation CMOS gate dielectric. Conventional SiO2 or SiON dielectric has its limits in CMOS scaling: inevitable leakage current for thinner oxide. With the help of high k materials, the gate oxide now can grow thicker to reduce leakage current without increasing electrical oxide thickness. In order to achieve adequate breakdown time, a thin and native layer of SiOx is always needed. However, many well known problems need further attention: Negative Bias Temperature Instability (NBTI) due to the imperfect interface of SiOx and HfOx; Positive Bias Temperature Instability (PBTI) due to the intrinsic oxide traps. Therefore, it is important to understand the properties of these traps, and Random Telegraphic Noise (RTN) is a powerful method to analyze it. First, in this work, we have developed a method to extract the trap position and energy level by measuring the capture and emission time of RTN signals. Through these information, we can analyze the damage caused by BTI stress, in which a leakage filament was formed. Both Inversion Mode RTN and Accumulation Mode RTN will be performed after PBTI and NBTI. Although the Accumulation Mode RTN has rarely been discussed, we have also demonstrated its importance to include the measurement of accumulation mode. Our results shows, by combing Inversion Mode RTN and Accumulation Mode RTN, a comprehensive detection window can be detected. Next, from the concept of the leakage filament, it raised our great interest in finding the leakage path that leads to the final breakdown. We traced traps location after each BTI stress until breakdown, and the entire breakdown path can be revealed. In this thesis, we have performed both Constant Voltage Stress and Constant Current Stress for both nMOSFET and pMOSFET. We presented that two types of breakdown path were observed: Spindle-liked breakdown and Snaked-liked breakdown path. A new concept to explain these various results: Energy Flux. Generally, nMOSFETs have larger current but lower carrier energy compared with pMOSFETs; CCS has more progress breakdown and damage in oxide as a result of the decreasing power dispersion. 莊紹勳 2014 學位論文 ; thesis 88 en_US
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description 碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === High k materials such as Hafnium dioxide are being used as next generation CMOS gate dielectric. Conventional SiO2 or SiON dielectric has its limits in CMOS scaling: inevitable leakage current for thinner oxide. With the help of high k materials, the gate oxide now can grow thicker to reduce leakage current without increasing electrical oxide thickness. In order to achieve adequate breakdown time, a thin and native layer of SiOx is always needed. However, many well known problems need further attention: Negative Bias Temperature Instability (NBTI) due to the imperfect interface of SiOx and HfOx; Positive Bias Temperature Instability (PBTI) due to the intrinsic oxide traps. Therefore, it is important to understand the properties of these traps, and Random Telegraphic Noise (RTN) is a powerful method to analyze it. First, in this work, we have developed a method to extract the trap position and energy level by measuring the capture and emission time of RTN signals. Through these information, we can analyze the damage caused by BTI stress, in which a leakage filament was formed. Both Inversion Mode RTN and Accumulation Mode RTN will be performed after PBTI and NBTI. Although the Accumulation Mode RTN has rarely been discussed, we have also demonstrated its importance to include the measurement of accumulation mode. Our results shows, by combing Inversion Mode RTN and Accumulation Mode RTN, a comprehensive detection window can be detected. Next, from the concept of the leakage filament, it raised our great interest in finding the leakage path that leads to the final breakdown. We traced traps location after each BTI stress until breakdown, and the entire breakdown path can be revealed. In this thesis, we have performed both Constant Voltage Stress and Constant Current Stress for both nMOSFET and pMOSFET. We presented that two types of breakdown path were observed: Spindle-liked breakdown and Snaked-liked breakdown path. A new concept to explain these various results: Energy Flux. Generally, nMOSFETs have larger current but lower carrier energy compared with pMOSFETs; CCS has more progress breakdown and damage in oxide as a result of the decreasing power dispersion.
author2 莊紹勳
author_facet 莊紹勳
Lu, Pin-Yi
呂品毅
author Lu, Pin-Yi
呂品毅
spellingShingle Lu, Pin-Yi
呂品毅
A New Methodology on the Investigation of Dielectric Breakdown in High-K Metal-Gate CMOS Devices
author_sort Lu, Pin-Yi
title A New Methodology on the Investigation of Dielectric Breakdown in High-K Metal-Gate CMOS Devices
title_short A New Methodology on the Investigation of Dielectric Breakdown in High-K Metal-Gate CMOS Devices
title_full A New Methodology on the Investigation of Dielectric Breakdown in High-K Metal-Gate CMOS Devices
title_fullStr A New Methodology on the Investigation of Dielectric Breakdown in High-K Metal-Gate CMOS Devices
title_full_unstemmed A New Methodology on the Investigation of Dielectric Breakdown in High-K Metal-Gate CMOS Devices
title_sort new methodology on the investigation of dielectric breakdown in high-k metal-gate cmos devices
publishDate 2014
url http://ndltd.ncl.edu.tw/handle/f97z4u
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