A New Methodology on the Investigation of Dielectric Breakdown in High-K Metal-Gate CMOS Devices
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === High k materials such as Hafnium dioxide are being used as next generation CMOS gate dielectric. Conventional SiO2 or SiON dielectric has its limits in CMOS scaling: inevitable leakage current for thinner oxide. With the help of high k materials, the gate o...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/f97z4u |