Study of DC and RF Characteristic Improvements on GaN HEMTs by AlN Passivation Layer and Surface Treatment
碩士 === 國立交通大學 === 照明與能源光電研究所 === 103 === AlGaN/GaN HEMTs have high electron mobility, high saturation velocity and high breakdown, comparing with other electron device. AlGaN/GaN HEMTs have been wide applications for high frequency and high power densities. However, their performance is limited by c...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/szuz3z |