| Summary: | 碩士 === 國立交通大學 === 光電工程研究所 === 103 === Recent trends of scaling have led to prosperity of embedded application. Non-volatile memory, featuring stored information can be retained in the absence of power, has become a promising alternative for conventional DRAM. With high-K dielectrics introduced, reliability and performance improvement can be achieved.
Charge trapping memory is regarded as one of the most promising flash memory technologies as further down-scaling continues. In addition, more and more exploration is investigated with high-k dielectrics implemented in the charge trapping memory. This thesis reviews the advanced research concerning charge trapping memory with high k dielectrics employed. On the basis of preceding research, we have now improved and substituted aluminum oxide for silicon oxide. Various process temperature as well as power are demonstrated and examined by means of permeability (abbreviated as K), dispersion and other material analysis techniques. Laser activation, which is essential to low thermal budget embedded application, has been discussed in this thesis. Two stacking dielectric structures along with retention and endurance characteristics are investigated. Temperature dependence of these characteristics will be investigated as well.
For further investigation, we may introduce our hafnium oxide, which is examined by permittivity and other material analysis techniques, to our dual tunneling NVM as charge trapping layer. Hence, larger hysteresis can be expected. With laser and plasma enhanced ALD, low thermal budget NVM with decent performance and reliability can be accomplished.
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