Patterned sol-gel IGZO TFT by surface energy modification.

• Main Authors: Kuo,Feng-Yu, 郭豐毓
• Other Authors: Hsiao-Wen Zan
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/hq5e2b

碩士 === 國立交通大學 === 光電工程研究所 === 103 === Solution-processed indium-gallium-zinc-oxide TFTs has been studied for recent years. The most attractive is the low cost fabrication processes, high charge carrier mobility and high optical transparency. Amorphous In-Ga-Zn-O thin film transistors (a-IGZO TFTs) has drawn a lot of attention. This dissertation aims to develop direct-pattern process, and combine it with amorphous indium gallium zinc oxide semiconductor thin-film transistor (a-IGZO TFT). Usually, the develop and etching process will damage the underlying active layer seriously.By utilizing the direct-pattern process, the damage can be avoided. In this thesis,we successfully simplfy the traditional process and present a method by surface energy modification.We use hydrophobic material to achieve our goal. Before we coat active layer,we coat hydrophobic film. Reactive ion etching (RIE) system is applied to treat the specific region in the next step. The property of that is changed from hydrophobic to hydrophilic. Because the difference of affinity, we can direct-pattern our film.