Solution-processable ZrO2 dielectric for Organic Field Effect Transistors
碩士 === 國立暨南國際大學 === 應用化學系 === 103 === In organic filed effect transistors we used the silicon dioxide for dielectric, when we do this process taking a lot of time, and the transistors size as small as possible, but when we reduce silicon dioxide thickness the current density is to high so not able t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/09286707272861189884 |