| Summary: | 碩士 === 國立暨南國際大學 === 應用化學系 === 103 === In organic filed effect transistors we used the silicon dioxide for dielectric, when we do this process taking a lot of time, and the transistors size as small as possible, but when we reduce silicon dioxide thickness the current density is to high so not able to do the dielectric. The High-K materials gradually being taken seriously. In this study we used the High-K materials zirconium oxide, and prepared the zirconium oxide solution was the simple solution process Spin-coating for High-K dielectric layer, in organic semiconductor layer was pentacene. We report three section explore the most suitable process of the insulating layer, for the first part different revolution speed we try 3000 to 7000 rpm. For the second part different annealing temperature, for the third part when annealing pass into the nitrogen as different time, and use Atomic Force Microscopy (AFM) observed at different annealing temperature, time and speeds effect of vacuum deposition Pentacene on the dielectric layer. Finally in this study we measure electronic transport properties of pentacene-base organic filed effect transistors.
Finally in this experimental the best condition used the 500℃ annealing and pass into nitrogen 60 minutes, the pentacene thin film also best. This device mobility reach 3.59cm2/sv threshold voltage -0.013V.
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