The studies of pulsed laser deposited Molybdenum disulfide used in field effect transistor

• Main Authors: Chia-Cheng Chou, 周珈丞
• Other Authors: Vincent K.S. Hsiao
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/39246078625176583195

碩士 === 國立暨南國際大學 === 應用材料及光電工程學系 === 103 === We use Pulsed Laser Deposition Thin Film (PLD) and Radio Frequency Plasma Laser Deposition(RF-PLD) to form MoS2 thin film transistor by MoS2target ,observed the characteristic of thin film and electrically . First we buy insulator SiO2 about 300 nm ,which doping in Si substrate ,and use Nd：YAG Laser with wavelength 532nm to bump MoS2targetin any case ,then it will generate plasma to form different MoS2 thin film on SiO2in different growth condition. We observe the surface condition of MoS2 thin film by SEM ,crystal case by XRD and the percentage of element by XPS. Finally ,put on the mask and use Thermal Coater Deposition to form Au as electrode on MOSFET about 50nm ,which channel length is 1.5 mm channel width is 0.1 mm ,and the gate is Si substrate .In different condition ,resistance too high to enable the current to flow through easily over ten minutes ,the film is quite uneven and even produce only grains less than three minutes .Therefore ,we can measure the output saturation curve on MOSFET with RF 31 W in five minutes which mobility is 0.003 cm2/V s. Besides, with RF 31 W but in three minutes, and upgrade the electrical characteristic which mobility can achieve 0.017cm2/V s, Vth is -4.64 V and on/off ratio ＞102