Growth and Physical Properties of Higher Manganese Silicide Nanowire Arrays with Double Tube CVD

• Main Authors: Chin-LiShen, 沈晉立
• Other Authors: Kuo-Chang Lu
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/yk936u

碩士 === 國立成功大學 === 材料科學及工程學系 === 103 === In order to study nanoscale manganese silicide materials in physical properties and potential application, synthesis techniques of nanostructure must be developed. In this work, we report a chemical reaction method to synthesize higher manganese silicide nanowires. Dense silicon nanowire arrays fabricated by chemical etching reacted with MnCl2 precursor by novel double tube method. In double tube system, if we carefully controlled argon flow rate and ambient pressure, it will be able to efficiently increase vapor pressure of source and stable source vapor provided. It is crucial that high quality higher manganese silicide nanowire were obtained with original nanostructures preserved by using double tube method. Characterization of nanowires were investigated by XRD, SEM, TEM and phase identification were performed by HRTEM, FFTs, SAED achieved single crystalline nanowire of actual HMS phase Mn27Si47 with tetragonal structure. Magnetic properties measurement show that Mn27Si47 nanowire exhibited ferromagnetic with enhanced Curie temperature compared with bulk HMS phase, and field emission measurement show excellent field enhancement factor 3307 with nanowires 20 μm long.