Characteristics of TaOx/ZnO bilayer resistive switching memory devices
碩士 === 國立成功大學 === 材料科學及工程學系 === 103 === In the traditional resistive random access memory device, the active layer is usually composed of a single active layer. However, the single active layer is not able to satisfy the specifications for a number of device requirements when a memory to be scal...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43058896779009585136 |