Development of functional inorganic semiconductor materials for organic light emitting diode devices

• Main Authors: Chih-JuiNi, 倪智銳
• Other Authors: Chau-Nan Hong
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/u27k6q

博士 === 國立成功大學 === 化學工程學系 === 103 === Silver nanowire (Ag NW)/inorganic semiconductor composite films and gallium nitride (GaN) films were fabricated for the application of organic light emitting diode (OLED) devices. The Ag NW ink was prepared using a simplified polyol method. After synthesis, a reusable porous membrane was utilized to purify the Ag NW solution. Nearly 90% of silver nanoparticles (Ag NPs) could be removed. In order to increase the conductivity of Ag NW films, antimony tin oxide (ATO) nanoparticles were added to form composite films. By emitting infrared (IR) light for 30 sec, the sheet resistance of the composite film could be decreased to 34 ohm/sq with a light transmittance of 91%. For the OLED devices using composite films as anodes, the maximum luminance and efficiency could reach 7020 cd/m2 and 2.7 cd/A, respectively, which was better than that of the device with indium tin oxide (ITO) anode. Next, the growth of GaN (0002) films deposited on sapphire substrates by inductively coupled-plasma (ICP)-enhanced reactive magnetron sputtering was investigated. X-ray diffraction (XRD) measurements confirmed that the high quality GaN crystallites could be obtained at a temperature as low as 500°C. The N:Ga ratio of the film grown at 500°C was almost 1:1. Afterwards, the crystalline GaN film was applied to the OLED device as a carrier transporting layer. The hybrid OLED that could be operated at high voltage showed the improved device durability. The maximum luminance of the hybrid OLED was 3451 cd/m2, higher than that of the conventional device.