A Survey of Temperature Effects of MOS Field-Effect Transistor in 180-nm Process Technology

• Main Authors: Yi-Hua Hsieh, 謝宜樺
• Other Authors: Yu-Cherng Hung
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/vjyxun

碩士 === 國立勤益科技大學 === 電子工程系 === 103 === With the IC process technology improvement continuously and transistor size shrink, more system functions can be realized and integrated in a single chip. Many consumer electronic products is thus with smaller volume and light weight. However, larger power consumption and operating temperature risen will impact the chip stability. The characteristics of MOSFET device will be varied when environmental temperature is altered. In order to enhance chip stability, we must understand MOSFET what related factors and how to be influenced by temperature variation. This works discusses temperature effects of MOS transistor. We investigate the current variation of MOS transistor with different size in temperature range of -40 ℃ ~ 80 ℃. The circuit simulator is HSPICE and the transistor parameters are based on CMOS 0.18-um process technology. By inspection of simulation results, we find the current of MOSFET increased or decreased will depend on transistor operation region and transistor size. That is, either various channel length (L) or MOSFET operation status: saturation or triode region, MOSFET current will be with corresponding varied or opposite varied when temperature alteration. The major two factors of MOSFET to be influenced by temperature, one is mobility and another one is threshold voltage. The works investigate the variation trend in mobility and threshold voltage. In addition, the important small-signal parameters in analog circuit such as output resistance, trans-conductance, and gain will also be investigated by simulation of a single stage common-source amplifier. The frequency variation of ring connected oscillator is simulated and analyzed under different temperatures.