Pb-Sb-S solid-state semiconductor-sensitized solar cell

• Main Authors: Yi-Cheng Chang, 張義正
• Other Authors: Ming-Way Lee
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/29508740056535688883

碩士 === 國立中興大學 === 奈米科學研究所 === 103 === This thesis investigates Pb-Sb-S solid-state semiconductor-sensitized solar cells. With an energy gap of 1.53eV, Pb5Sb8S17 is suitable for use as an absorber material for solar cell. Our lab previously achieved an efficiency of 2.5% in Pb5Sb8S17 liquid-junction solar cells. In this research, I carried out the construction of solid-state solar cells. Pb-Sb-S semiconductor was deposited on a mesoporous-TiO2 electrode using successive ionic layer adsorption and reaction method-SILAR. The material was then characteristized with transmission electron microscopy and scanning electron microscopy (SEM).The hole transport material (spiro-OMeTAD ) ,HTM was filled into the mesoporous-TiO2 electrode and forms a layer over the sensitizer. Finally an Au electrode is sputtered over the cell as the electron collector. The cell had the structure of : TiO2 blocking layer / TiO2 + Pb-Sb-S / spiro / Au. X-ray diffraction analysis of reveals the Pb5Sb8S17 phase. The best Pb5Sb8S17 cell achieved an power conversion efficiency of 1.79 % ,an open circuit voltage Voc of 0.48 V ,a short circuit current Jsc of 11.92 mA/cm2, and fill factor(FF) of 30.76% under 100% AM 1.5 sunlight. Under a reduced light of 10% AM 1.5 sun ,the cell efficiency increased to 4.14%, with a Voc of 0.41 V ,a Jsc of 2.00 mA/cm2,a FF of 50.49%. Field emission SEM ,revealed insuffient HTM filling ,suggesting possible higher efficiencies with improving HTM injection.