Effects of CF4 Plasma Treatment on Characteristics of Enhancement Mode AlGaN/GaN High Electron Mobility Transistors

Effects of CF4 Plasma Treatment on Characteristics of Enhancement Mode AlGaN/GaN High Electron Mobility Transistors

碩士 === 國立中興大學 === 精密工程學系所 === 103 === In this study, we study the effects of CF4 plasma treatment on the characteristics of enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors. The CF4 plasma is generated by inductively coupled plasma reactive ion etching (ICP-RIE) system. The CF4...

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Bibliographic Details
Main Authors:	Chih-Tung Yeh, 葉治東
Other Authors:	Ray-Hua Horng
Format:	Others
Language:	zh-TW
Published:	2015
Online Access:	http://ndltd.ncl.edu.tw/handle/52657953070001213397

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