| Summary: | 碩士 === 國立中興大學 === 物理學系所 === 103 === We studied the electrical transportation properties of the boron-doped p-type germanium tin semiconductor grown by molecular beam epitaxy(MBE).We used the transmission line method and Ohm’s law to study the contact resistance between germanium tin semiconductor and metal electrode. The ranges of obtained contact resistance are from 3.1 Ω to 6.9 Ω Compared the contact resistance with different annealing temperatures, we found that the best annealing temperature of the sample with the smallest contact specific resistivity, 0.32 Ω∙〖mm〗^2, at room temperature is 300 ℃. The mobility at 300 ℃ annealing temperature is larger than those at 350 ℃ and 400 ℃annealing temperature. The mobility are about 12.2 〖cm〗^(2)/V．s, 10.8 〖cm〗^(2)/ V．s and 10.2 〖cm〗^(2)/V, respectively. The currier density is 4.3×〖10〗^17 〖cm〗^(-3) . From the investigations of temperature dependence of mobility, carrier density and contact resistance, we found that the electrical transport of this p-type GeSn film is metal-like.
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