Study of electrical property of p-type Ge9.7Sn0.3 semiconductor
碩士 === 國立中興大學 === 物理學系所 === 103 === We studied the electrical transportation properties of the boron-doped p-type germanium tin semiconductor grown by molecular beam epitaxy(MBE).We used the transmission line method and Ohm’s law to study the contact resistance between germanium tin semiconductor an...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/78312573708375681010 |