InGaN Light-Emitting Diodes with Embedded Nanoporous GaN Distributed Bragg Reflectors
碩士 === 國立中興大學 === 材料科學與工程學系所 === 103 === In this thesis, InGaN-based light emitting diodes (LED) with embedded conductive nanoporous-GaN/undoped-GaN (NP-GaN/u-GaN) distributed Bragg reflectors (DBR) have been demonstrated. The nanoporous GaN DBR structures were fabricated through a pulse 355nm laser...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15771931667395103763 |