Nitride-based solar cells with different substrates

• Main Authors: Wei-cheng Lin, 林韋成
• Other Authors: 林佳鋒
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/95112041232297170049

碩士 === 國立中興大學 === 材料科學與工程學系所 === 103 === In this paper, we preparation of InGaN / GaN multiple quantum wells light-emitting diodes grown on <111> silicon substrate. Another was the standard light-emitting diodes on sapphire substrates. In the solar characteristics, in the full-band illumination was observed light- emitting diode open-circuit voltage of the sapphire substrate is greater than the light-emitting diode on Si substrate. But in the short-circuit current, light-emitting diodes sapphire substrate than the light-emitting diode Si substrate was increased 2.3-fold. Speculated that the reason the substrate may direct the growth of GaN on Si, due to the difference in lattice constant, cause defects. and Si substrate had visible-wavelength absorption capabilities. Light-emitting diodes sapphire substrate with high open-circuit voltage characteristics, the fill factor of the sapphire substrate is filled with 81.19%, while the light-emitting diode silicon substrate is about 64.8%, in contrast, the sapphire substrate light-emitting diode efficiency slightly better than the Si substrate Light-emitting Diode.