| Summary: | 碩士 === 國立中興大學 === 材料科學與工程學系所 === 103 === In this paper, we preparation of InGaN / GaN multiple quantum wells light-emitting diodes grown on <111> silicon substrate. Another was the standard light-emitting diodes on sapphire substrates.
In the solar characteristics, in the full-band illumination was observed light- emitting diode open-circuit voltage of the sapphire substrate is greater than the light-emitting diode on Si substrate. But in the short-circuit current, light-emitting diodes sapphire substrate than the light-emitting diode Si substrate was increased 2.3-fold. Speculated that the reason the substrate may direct the growth of GaN on Si, due to the difference in lattice constant, cause defects. and Si substrate had visible-wavelength absorption capabilities. Light-emitting diodes sapphire substrate with high open-circuit voltage characteristics, the fill factor of the sapphire substrate is filled with 81.19%, while the light-emitting diode silicon substrate is about 64.8%, in contrast, the sapphire substrate light-emitting diode efficiency slightly better than the Si substrate Light-emitting Diode.
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