Chemical Mechanical Polishing parameter of Semiconductor Process relation with Mechanical Torque Influence Analysis

• Main Authors: LIN CHIH CHUNG, 林志忠
• Other Authors: CHUNG YUNG CHIANG
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/4zttbu

碩士 === 明志科技大學 === 機械工程系機械與機電工程碩士班 === 103 === Chemical Mechanical Polishing (CMP) is an important part in the complicated semiconductor process because of its steady and overall smoothing. The purpose of this thesis is to study the torque for smoothing in the CMP process using different parameters. It analyzed the connecting relationship by setting various polish head, polish platen and polish pad experimental conditions. And the conditions are (1) polish pad types of different materials, (2) rotational speeds of polish head, (3) different positions of polish head on the platen, (4) wafer numbers by using polish pad. It discussed the important reasons and optimum experimental conditions by using the four experiment parameters. The results based on the experimental data are: (1) The larger the hardness of pad surface material, the torque was higher; (2) the larger the rotational speed of polish head, the torque was higher; (3) the closer the polish head position to the center of the polish platen, the torque was lower; (4) the larger the using time of polish pad (wafer numbers by using polish pad), the torque was higher. It analyzed that the influence of various parameters on the torque of CMP and obtained the results of experiment in the research.