Deposition and Characterization of GZO, Cu2O, Ga2O3 Single and Multilayered Thin Films by Ion-Beam-Assisted Deposition (IBAD)

• Main Authors: CHANG, CHE-KAI, 張哲愷
• Other Authors: HSIEH, JANG-HSING
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/7gd5sp

碩士 === 明志科技大學 === 材料工程系碩士班 === 103 === This study included two parts. In the first part, Ga-doped zinc oxide (GZO) and Cu2O thin films were deposited on glass substrates by Ion-Beam-Assisted Deposition (IBAD). The effects of ion beam discharge current and O2/Ar ratio on the structural, optical, and electrical properties of these films were investigated. The optical emission spectra of the applied ion beam were examined using an optical emission spectrometer (OES). The correlation of optical emission and films’ properties was studied. After the analysis of opto-electrical behaviors over the deposited films, a GZO and a Cu2O films were selected to make a PN junction on the glass substrate. For this device, Ag was chosen as the electrode material. In the second part, Ga2O3 thin films with various thickness (5 ~ 20 nm), also deposited by IBAD, were inserted between GZO and Cu2O layers, and the I-V curves were measured and analyzed. The inserted Ga2O3 layer was thought to reduce the defect density at the interface, and, therefore, improve the efficiency. In sum, it is found that the discharge current and O2/Ar ratio had significant effects on these films’ structural, optical, and electrical properties (except Ga2O3). The optimum conditions was found when discharge current = 0.2~0.35 A, and O2/Ar = 1/3.