| Summary: | 碩士 === 明志科技大學 === 材料工程系碩士班 === 103 === In this study, we plan to design novel interfacial materials by structural variations, incorporating N,N-di(p-methoxyphenyl)amine (stronger electron donor) or carbazole (high hole mobility) into the 5,10-dihydroindeno[2,1-a]indene skeleton as the hole transporting layer (HTL) in organic photovoltaics. Because of their photophysical, electrochemical, and morphological properties and surface energies and device structures, We found the replacement of our HTLs into the normal OPV Poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) device has significant effect on the surface morphology of the active layer of OPV device. An optimized device having the structure indium tin oxide/HTM/P3HT:PCBM/Ca/Al , the best OPV performance was observed for annealed our HTL films at 200 oC for 10 min—it exhibited a PCE of 3.0 %, a value of Jsc = 8.8 mA cm–2, a value of Voc = 0.50 V, and a FF = 68.1%.
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