Short-Channel Effects and Reliability of the Different LDD and Pocket Doping Concentration on Ultra Thin Body SOI Devices

碩士 === 明新科技大學 === 電子工程系碩士班 === 103 === As process technology at progress, so that the element size increasingly miniature, let component reliability becomes more important, research is also an important indicator. In the case of miniature components, But also led to SCE(Short Channel Effects),DIBL(D...

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Bibliographic Details
Main Authors: Shou-Chun Mu, 穆守駿
Other Authors: Chii-Wen Chen
Format: Others
Language:zh-TW
Published: 2015
Online Access:http://ndltd.ncl.edu.tw/handle/27470713785967649769