| Summary: | 碩士 === 龍華科技大學 === 電子工程系碩士班 === 102 === The measured isolations of the prototype are less than -20 dB in all operating frequency bands. In recent years, The circuit design of RF is an important item of chip development, maintaining the high band of operating and increase the bandwidth range,Is trend of communication systems in the future, In addition, consider of the designers low cost, low power and low area is important trend of RF circuit.
Data transmission range of Silicon RF components above the up to 10 km, RF silicon components has simple process , high circuit density, low cost and low power characteristics by itself, therefore IC designers become one of the charismatic select.
In this thesis research Design of Active Balun and Noise Cancelling Low Noise Amplifier,the first one is active balun using 0.35μm GaN-on-Si HEMT process,design balanced architecture, Forward gain (S21) and (S31), respectively 5.7dB and 4.6dB, Bandwidth 2.6GHz, Phase difference equal to 180 ± 5 degrees, Linearity of port2 and Linearity of port3, respectively 8dBm and 10dBm,Power dissipation 833.6mW, total circuit area is 3mm2.
The second part is Noise Canceling Low Noise Amplifier, using TSMC 0.18um CMOS 1P6M Mixed-mode TSMC process, Forward gain (S21) is 21dB at the 3.6~6GHz,Input return loss (S11) less than-10dB, Output return loss (S22) less than-10dB,Noise Figure is 2.2 ~2.6dB at the 3.6~6GHz, Linearity is -8dBm, Power.
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