The Optoelectronic Properties of MZO Transparent Conducting Thin Films on Flexible Substrate by Using Sputtering Technology.

• Main Authors: Bo-Lun Jian, 簡伯倫
• Other Authors: Tao-Hsing Chen
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/13974168790418762846

碩士 === 國立高雄應用科技大學 === 機械與精密工程研究所 === 103 === This study utilizes DC magnetron sputtering to deposited MZO transparent conductive films on the PI(polyimide) flexible substrates and Corning glass substrate with different sputtering power, and then annealed in vacuum with different annealing temperatures. Finally, it investigates the characteristics of the annealing process with MZO transparent conductive films. Furthermore, it also investigates the effect of deposition time and Argon flowing ratio influence on the optic-electric properties of MZO transparent conductive film. The results show that the MZO transparent conductive films deposited on PI flexible substrates with sputtering power 100W、Argon flowing ratio 15 sccm and deposition time 40mins has lowest electrical resistivity about 6.02 x10-3 Ω-cm, average transmittance about 46.3%. Furthermore, the MZO thin film deposited on Corning glass also has lowest electrical resistivity about 4.54 x10-3 Ω-cm, average transmittance about 63.1% on the same process condition (100W, 15sccm and 40mins). However, the surface microstructure and surface roughness are observation by using SEM and AFM. The results present that sputtering power and deposition time increase with increasing the surface microstructure compacting. The surface roughness increase with increasing sputtering power, but decrease with deposition time increased.