Material Characteristics of Copper-Oxide Thin Films and Their Resistive Memory Properties

• Main Authors: Guo-Hao Qin, 秦國豪
• Other Authors: Chih-Yi Liu
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/57228869327831733020

碩士 === 國立高雄應用科技大學 === 電子工程系碩士班 === 103 === In this thesis, the use of copper oxide (CuO) and cuprous oxide (Cu2O) for preparing a film as the insulating layer CuxO RRAM using thermal evaporation system CuxO film deposited on the bottom electrode of platinum (Pt), then use the semiconductor industry rapid thermal annealing (RTA) CuxO change the nature of the film. in order to observe the characteristic change in the film, by a scanning electron microscope (SEM) to observe the surface morphology, and using an atomic force microscope (AFM) observation of the roughness of the film whether to turn state properties impact, and the use of low grazing angle X-ray diffraction instrument (GXRD) crystallized analysis and X-ray photoelectron spectroscopy (XPS) analysis film chemical bonding. In thermal evaporation deposition system of copper (Cu) and nickel (Ni) metal electrode film to complete CuxO metal / insulator / metal (MIM) structure for electrical measurements. That belongs to the bipolar switching element, and different RTA conditions will turn changing element of state properties and state transfer mechanism is changed from the electrochemical effects of thermo-chemical effects, and summarizes the different RTA conditions turn state CuxO thin film properties and turn state mechanisms effect.