Design of 10-Gb/s VCSEL Driver and Pre-emphasis Circuits in 0.18 μm CMOS Technology
碩士 === 國立高雄應用科技大學 === 電子工程系碩士班 === 103 === In this thesis, a laser diode driver (LDD) for vertical-cavity surface-emitting laser (VCSEL) and a LDD with pre-emphasis circuit are designed and the LDDs can be applied in the optical transmitter circuit of optical communication system. The two circuits w...
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ndltd-TW-103KUAS03930332019-05-15T22:00:19Z http://ndltd.ncl.edu.tw/handle/3qxa7h Design of 10-Gb/s VCSEL Driver and Pre-emphasis Circuits in 0.18 μm CMOS Technology 以0.18μm互補式金氧半技術設計10-Gb/s面射型雷射二極體驅動器及預增強電路 Li-Yeh Chang 張立業 碩士 國立高雄應用科技大學 電子工程系碩士班 103 In this thesis, a laser diode driver (LDD) for vertical-cavity surface-emitting laser (VCSEL) and a LDD with pre-emphasis circuit are designed and the LDDs can be applied in the optical transmitter circuit of optical communication system. The two circuits were designed in TSMC 0.18 μm complementary metal-oxide-semiconductor (CMOS) technology. The first LDD is designed for a common cathode VCSEL diode. The driver circuit consists a pre-amplifier stage and an output driver stage. The pre-amplifier stage includes a Cherry-Hooper amplifier and a differential buffer with active inductor. The output driver stage can control the output current into the common cathode VCSEL. This chip can be operated at 10Gb/s, and its modulation current can be adjusted from 1.7 to 10.9 mA. The second LDD with pre-emphasis circuit is designed to increase the operation rate of laser diode. In this circuit, the two path signals are subtracted to enhance the upper and lower edges of output signal. This chip can be operated at 10-Gb/s, its modulation current is about 7 mA, and its bias current can be set from 0 to 7.2 mA. Our two LDD chips can be suitable to apply in short-distance optical transmission and 10-Gb Ethernet. Jau-Ji Jou 周肇基 2015 學位論文 ; thesis 104 zh-TW |
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碩士 === 國立高雄應用科技大學 === 電子工程系碩士班 === 103 === In this thesis, a laser diode driver (LDD) for vertical-cavity surface-emitting laser (VCSEL) and a LDD with pre-emphasis circuit are designed and the LDDs can be applied in the optical transmitter circuit of optical communication system. The two circuits were designed in TSMC 0.18 μm complementary metal-oxide-semiconductor (CMOS) technology.
The first LDD is designed for a common cathode VCSEL diode. The driver circuit consists a pre-amplifier stage and an output driver stage. The pre-amplifier stage includes a Cherry-Hooper amplifier and a differential buffer with active inductor. The output driver stage can control the output current into the common cathode VCSEL. This chip can be operated at 10Gb/s, and its modulation current can be adjusted from 1.7 to 10.9 mA.
The second LDD with pre-emphasis circuit is designed to increase the operation rate of laser diode. In this circuit, the two path signals are subtracted to enhance the upper and lower edges of output signal. This chip can be operated at 10-Gb/s, its modulation current is about 7 mA, and its bias current can be set from 0 to 7.2 mA.
Our two LDD chips can be suitable to apply in short-distance optical transmission and 10-Gb Ethernet.
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author2 |
Jau-Ji Jou |
author_facet |
Jau-Ji Jou Li-Yeh Chang 張立業 |
author |
Li-Yeh Chang 張立業 |
spellingShingle |
Li-Yeh Chang 張立業 Design of 10-Gb/s VCSEL Driver and Pre-emphasis Circuits in 0.18 μm CMOS Technology |
author_sort |
Li-Yeh Chang |
title |
Design of 10-Gb/s VCSEL Driver and Pre-emphasis Circuits in 0.18 μm CMOS Technology |
title_short |
Design of 10-Gb/s VCSEL Driver and Pre-emphasis Circuits in 0.18 μm CMOS Technology |
title_full |
Design of 10-Gb/s VCSEL Driver and Pre-emphasis Circuits in 0.18 μm CMOS Technology |
title_fullStr |
Design of 10-Gb/s VCSEL Driver and Pre-emphasis Circuits in 0.18 μm CMOS Technology |
title_full_unstemmed |
Design of 10-Gb/s VCSEL Driver and Pre-emphasis Circuits in 0.18 μm CMOS Technology |
title_sort |
design of 10-gb/s vcsel driver and pre-emphasis circuits in 0.18 μm cmos technology |
publishDate |
2015 |
url |
http://ndltd.ncl.edu.tw/handle/3qxa7h |
work_keys_str_mv |
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