An Analyses and Research on the Growth of Cu2ZnSnS4 Thin Film Solar Cell using Sulfurization Processes

• Main Authors: Chen Hung-En, 陳宏恩
• Other Authors: Chen Wen-Lih
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/04029857761694406472

博士 === 崑山科技大學 === 機械與能源工程研究所 === 103 === In this thesis, a CZTS thin film is prepared on SLG substrate by the vacuum sputter and sulfurization methods. The CZT precursor is firstly prepared by the vacuum sputtering method; the composition ratio in the precursor is controlled by the proper individual thickness of metal- layers. Then the CZTS thin film can be obtained in the sulfurization atmosphere. Through the analyses and investigations, the better metal composition ratio and sulfurization temperature on the influences to the optical and electrical properties of CZTS film can be found out. From this, and the CZTS thin film solar cell is fabricated. And the main research results are as follows: 1.The 510℃ sulfurization temperature suggested in reference is used in this paper. It is found that the CZTS thin film can obtain better performance by applying Cu/(Zn+Sn)=0.84 and Zn/Sn=1.22 composition ratios. The better uniform compactness and adhesion on the glass substrate are obtained. Its band gap energy, resistivity, carrier concentration, and mobility of the CZTS thin film are 1.47eV, 9.268Ω-cm, 1.053×1017 cm-3 and 6.4 cm2/ (V•s) respectively. 2. The influence of sulfurization temperature between 400-560℃ on the performances of CZTS thin film in this paper. It is found that there are some impurity binary phases in the thin film with the sulfurization temperature less than 500℃, and the crystallite size of CZTS is quite small. With the increasing the sulfurization temperature, the thin film exhibits (112) preferred orientation with large crystallite size and higher density.A better CZTS performance can be obtained while the sulfurization temperature is 560℃. Its band gap energy, resistivity, carrier concentration, and mobility of the CZTS thin films are 1.49eV, 9.37Ω-cm, 1.714×1017 cm-3 and 3.89cm2/(Vs), respectively. Additionally, the CZTS films sulfurized at 560℃ exhibits similar properties with those sulfurized at 510℃. 3. In this paper, a good performance CdS buffer layer suitable for CZTS thin film solar cell is prepared by CBD method, then the CZTS thin film solar cell can be prepared, and its conversion efficiency reaches 3.64 %.