The Application of TiO2 on High-Electron-Mobility Transistor
碩士 === 義守大學 === 電子工程學系 === 103 === The study uses solution gelation (sol-gel) processed titanium dioxide (TiO2) as gate oxide layer of metal-oxide-semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT), the mixed solution was uniformly deposited on the surface of the InP Schottky la...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/zn7ab6 |