The Effects of Cu Doping on Microstructure and Properties of Cu2O Target

• Main Authors: Wei-Lin Ye, 葉瑋琳
• Other Authors: Boen Houng
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/yppr52

碩士 === 義守大學 === 材料科學與工程學系 === 103 === Because of easy reaction with oxygen at ambient atmosphere, Cu2O is formed under vacuum or in a protected atmosphere. In this study, we fabricated dense Cu2O ceramics by mixing Cu2O and Cu powder. The purpose of adding copper powder is to assist the densification of Cu2O by providing viscous flow during sintering processing. The concentration of copper powder is ranged from 1 to 20wt%. The effect of copper concentration on the densification behavior, microstructure and electrical property is investigated. The results showed that no any CuO phases were formed. The Cu2O ceramic has a lowest electrical resistivity about 5.4×104Ω．cm at 10wt% of copper addition. In addition, the relative density can reach to 99.99% at sintering temperature 1000℃ and 1050℃. The apparent porosity also decreased to 0.41%. Whereas the same performance can be also achieved by hot-pressing process.