Annealing Effect on the Characteristics of Sn-O System Prepared by Hydrothermal Method

碩士 === 逢甲大學 === 電子工程學系 === 103 === This dissertation proposed a hydrothermal with varying annealed temperatures and annealed condition technique for fabricating the porous Sn-O thin film on glass substrate to change mixed state and research their microstructure and material properties. In experiment...

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Main Author: 鄭承哲
Other Authors: 施仁斌
Format: Others
Language:zh-TW
Published: 2015
Online Access:http://ndltd.ncl.edu.tw/handle/846s6f
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spelling ndltd-TW-103FCU054280182019-05-15T22:25:30Z http://ndltd.ncl.edu.tw/handle/846s6f Annealing Effect on the Characteristics of Sn-O System Prepared by Hydrothermal Method 退火效應在水熱法製備Sn-O系統及其特性分析 鄭承哲 碩士 逢甲大學 電子工程學系 103 This dissertation proposed a hydrothermal with varying annealed temperatures and annealed condition technique for fabricating the porous Sn-O thin film on glass substrate to change mixed state and research their microstructure and material properties. In experimental, a Sn thin film was deposited on the clean glass substrate by sputtering, and the Sn thin film was annealed by teflon to form the Sn-O as the seed layer. Next, the Sn-O thin film was grown on the samples. The samples annealed by varying annealed temperatures and annealed condition. The SnCl4∙5H2O (0.1M) and NaOH (0.5M) were used in this hydrothermal process. Through the SEM analysis, the annealed Sn-O thin film was observed like flower-shapes and uniform. Besides , the Sn-O thin film could separate effectivity by annealed at O2 process. The hydrothermal method can easily be used for fabricating needed microstructures of Sn-O thin film. The hydrothermal–induced Sn-O thin film can be applied in gas sensor systems. Therefore, this preparation of the hydrothermal method is a simple, low cost process to exhibits a good development for fabricating Sn-O thin film . 施仁斌 2015 學位論文 ; thesis 76 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 逢甲大學 === 電子工程學系 === 103 === This dissertation proposed a hydrothermal with varying annealed temperatures and annealed condition technique for fabricating the porous Sn-O thin film on glass substrate to change mixed state and research their microstructure and material properties. In experimental, a Sn thin film was deposited on the clean glass substrate by sputtering, and the Sn thin film was annealed by teflon to form the Sn-O as the seed layer. Next, the Sn-O thin film was grown on the samples. The samples annealed by varying annealed temperatures and annealed condition. The SnCl4∙5H2O (0.1M) and NaOH (0.5M) were used in this hydrothermal process. Through the SEM analysis, the annealed Sn-O thin film was observed like flower-shapes and uniform. Besides , the Sn-O thin film could separate effectivity by annealed at O2 process. The hydrothermal method can easily be used for fabricating needed microstructures of Sn-O thin film. The hydrothermal–induced Sn-O thin film can be applied in gas sensor systems. Therefore, this preparation of the hydrothermal method is a simple, low cost process to exhibits a good development for fabricating Sn-O thin film .
author2 施仁斌
author_facet 施仁斌
鄭承哲
author 鄭承哲
spellingShingle 鄭承哲
Annealing Effect on the Characteristics of Sn-O System Prepared by Hydrothermal Method
author_sort 鄭承哲
title Annealing Effect on the Characteristics of Sn-O System Prepared by Hydrothermal Method
title_short Annealing Effect on the Characteristics of Sn-O System Prepared by Hydrothermal Method
title_full Annealing Effect on the Characteristics of Sn-O System Prepared by Hydrothermal Method
title_fullStr Annealing Effect on the Characteristics of Sn-O System Prepared by Hydrothermal Method
title_full_unstemmed Annealing Effect on the Characteristics of Sn-O System Prepared by Hydrothermal Method
title_sort annealing effect on the characteristics of sn-o system prepared by hydrothermal method
publishDate 2015
url http://ndltd.ncl.edu.tw/handle/846s6f
work_keys_str_mv AT zhèngchéngzhé annealingeffectonthecharacteristicsofsnosystempreparedbyhydrothermalmethod
AT zhèngchéngzhé tuìhuǒxiàoyīngzàishuǐrèfǎzhìbèisnoxìtǒngjíqítèxìngfēnxī
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