Investigation the Simulation for InAlAs/InGaAs High Electron Mobility Transistors (HEMTs) Design and Analysis
碩士 === 逢甲大學 === 電子工程學系 === 103 === In this thesis, we constructed the InAlAs/InGaAs high electron mobility transistors (HEMT) by TCAD (Technology Computer Aided Design). Both the high-frequency characteristics and cutoff frequency were significantly improved when the gate length decreased. In additi...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43021704632576602305 |