The Study of Electrical and Optical Properties for the Oxide in Semiconductor
碩士 === 大葉大學 === 電機工程學系 === 103 === We investigate the electrical and optical properties of oxide layer in the semiconductor. The oxide layers are fabricated by the RTCVD according to the structure of the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). The aluminum contactors are deposite...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/11563290489390029343 |
| Summary: | 碩士 === 大葉大學 === 電機工程學系 === 103 === We investigate the electrical and optical properties of oxide layer in the semiconductor. The oxide layers are fabricated by the RTCVD according to the structure of the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). The aluminum contactors are deposited by the thermal evaporation system. In the application of lithography technique, the wet aching and deposition method are used to construct the field effect transistor. The thickness dependence of oxide layers are studied by the current-voltage measurement. The composition of oxide layer is determined by the scanning electron microscope (SEM). The thickness of oxide layer is decided in the difference deposition times (3hr, 6hr and 12hr) by the a step measurement. From the current-voltage measurement, the threshold voltage (Vt) of different oxide layer are relation to the square root of the gate-source voltage (Vgs). It indicates that the body effect of MOSFET is dominated in this structure of oxide layer in the semiconductor.
|
|---|