The Experimental Study of Photo Resist Reduction for Spin Coating

• Main Authors: Deng-Kai Hu, 胡登凱
• Other Authors: Yeeu-Chang Lee
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/3wf3mk

碩士 === 中原大學 === 機械工程研究所 === 103 === In order to reduces photoresist waste rate and costs in this technical papers. Because research plan and appear Finger-like instability、poor coating and discolor condition. Both are reduction photoresist endures one. On the other hand, and thereby reducing environmental pollution waste photoresist. Study is carried out for the negative photoresist decrement green layer, and chance coating condition in the process. Precoating solvent (OK73) do spin speed 1000 rpm/sec and use spin speed 40 rpm/sec slowly coating photoresist from the center out 3 cm distance, and final use spin speed 1250 rpm/sec throw off photoresist. In process add OK73 coating steps on the wafer surface. The first, can improvement condition on wafer surface, second avoid result photo resist poor coating and discolor one. In conclusion, execute film thickness trace on wafer surface. In experiment four, use solvent precoating、spin speed 1250 rpm/sec and volume 4.0ml conditions. The average film thickness data 9319.16 and range 385.65 of the standard (STD), and design of experiments (DOE) data 9317.15, range 831.17 both close. STD and DOE standard deviation both near. We are knows experiment result stable in experiment four. (STD standard deviation average film thickness data 16.05 and range 14.15；DOE standard deviation data 18.44 and range 12.94). The final, use glass wafer traces transmittance. STD transmittance data 92.98 %；DOE use three glasses wafer trace experiment four condition and stable, and transmittance data are 93.17 %、92.79 % and 92.97 %.