| Summary: | 碩士 === 中原大學 === 電子工程研究所 === 103 === Today, as far as the specifications of thin film transistors, the need of high carrier mobility, high on/off current ratio, good uniformity and low process temperature are concerned. However, the amorphous silicon and poly-silicon, still can’t meet these criteria of the thin film transistors.
In recent years, there have been many alternative materials, such as zinc oxide doped with indium and gallium (IGZO) material. The IGZO thin films of high transmittance in the visible range and at room temperature for growth of the amorphous structure have no grain boundary problem for mass production. In addition, the electrical property of IGZO can be controlled by the doping of Indium and Gallium.
In this study, IGZO film were grown on si(100),sapphire(0001) and glass substrate at room temperature by RF magnetron sputter and Sol-gel process. Annealing at high temperature was then followed. The crystal structure of IGZO film was characterized by XRD measurements. The structure of IGZO film become poly-type at 600°C. From Hall measurement results, we found the samples annealed with high temperature in N2 gas environment would be with better electrical properties. The electrical properties of samples annealed in O2 gas environment would be not good. The transmittance of IGZO films on sapphire and glass substrates are good at visible light range.
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