Characteristics of Mg-doped Cu2O films prepared by chemical bath deposition
碩士 === 中原大學 === 電子工程研究所 === 103 === In this study, Magnesium doped Cu2O(Cu2O:Mg) films was prepared by Chemical bath deposition. The Magnesium doped cuprous oxide (Cu2O: Mg) films are prepared by using copper sulfate (CuSO4) solution with the addition of magnesium nitrate (Mg(NO3)2) as the source of...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04667764979674436668 |
| Summary: | 碩士 === 中原大學 === 電子工程研究所 === 103 === In this study, Magnesium doped Cu2O(Cu2O:Mg) films was prepared by Chemical bath deposition. The Magnesium doped cuprous oxide (Cu2O: Mg) films are prepared by using copper sulfate (CuSO4) solution with the addition of magnesium nitrate (Mg(NO3)2) as the source of magnesium. The films are annealed in nitrogen at different temperature.
X-ray diffraction patterns show that the Cu2O:Mg films have a sphalerite structure with a dominant plane orientation of Cu2O(111). SEM measurement results show that grain size of Cu2O:Mg films becomes larger and uniform, after annealing. The Cu2O:Mg films surface is relatively smooth.
In Electrical characteristics, we plate gold (Au) about 1500Å on Cu2O:Mg films as electrode to form Au/Cu2O:Mg/Cu Schottky diode elements. The Au/ Cu2O:Mg/Cu Schottky diode is characterized by I-V and C-V measurement.
The C-V measurement results show that carrier concentration of Cu2O:Mg films with different annealing temperature about 2.65×1017~1.54×1016. PL and hot probe measurement results are displayed Mg-doped copper oxide films after 500℃ annealing, which conductive have a tendency into P-type.
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