Annealing study of Ni-doped Curprous Oxide(Cu2O:Ni) film by chemical bath deposition
碩士 === 中原大學 === 電子工程研究所 === 103 === Cuprous oxide is a direct band-gap semiconductor, energy gap size is 2.1eV with a high absorption coefficient in the visible region and the obtained cuprous oxide sources easily, copper abundant metal in the earth, this material with low-cost, simple, non-toxic, e...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/78920261439938845464 |