The study of simulation and kinetic analysis for GaN/InN/InGaN by metal organic chemical vapor deposition

The study of simulation and kinetic analysis for GaN/InN/InGaN by metal organic chemical vapor deposition

碩士 === 中原大學 === 化學工程研究所 === 103 === A zero-dimension reactor model and the chemical mechanisms of GaN / InN / InGaN metal organic chemical vapor deposition (MOCVD) have been investigated in this research. The influence of the process parameters is discussed by Rate-Of-Production analysis. It is foun...

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Bibliographic Details
Main Authors:	Chun-Jung Chen, 陳俊榮
Other Authors:	Ta-Chin Wei
Format:	Others
Language:	zh-TW
Published:	2015
Online Access:	http://ndltd.ncl.edu.tw/handle/4h863v

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