Electrical Properties of Electroless-etched Si Nanowire Devices

• Main Authors: Huang, Sheng-Chieh, 黃聖傑
• Other Authors: Lu, Ming Yen
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/edjvc4

碩士 === 國立中正大學 === 光機電整合工程研究所 === 103 === Si nanowires (NWs) were obtained by using wet chemical etching method, this method can be served as the low-cost and mass production technique. The Si wafer with different types were used to acquire the Si NWs with the identical material properties. The lengths of p-Si NWs can be controlled to be 22.5 um, 31.5 um, 45.5 um and 48.7 um with the etching time of 100 min, 200 min, 300 min and 400 min, respectively. The absorbances of etched Si NW arrays are more than 99% , indicating that Si NW arrays have good light trapping ability. Wet-chemical-etched Si NW arrays exhibit very low reflection and strong absorption so they have potential for photodetectors and solar cells. Further, the fabrication of p-type and n-type Si NW field effect transistors (FETs) were achieved using lithography. The carrier concentrations and mobility of devices can be extracted from I-V characteristics. The carrier concentrations of p-Si NW and n-Si NW were determined to be 1.15x1018 cm-3 and 2.61x1017 cm-3, respectively. Moreover, the average carrier mobility of p-Si NW and n-Si NW are 6.66x10-3 cm2/Vs and 5.41x10-3 cm2/Vs, respectively.