The UV/VIS Photodetector Fabrication and Photo Characteristics Study of Deposited Sb2S3 on TiO2-Graphene Composite
碩士 === 國立中正大學 === 光機電整合工程研究所 === 103 === In this study, graphene was grown on copper foil by chemical vapour deposition (CVD) and transferred onto glass substrate. Then, TiO2 and Sb2S3 semiconductor thin film were deposited onto graphene by drop casting and chemical bath deposition (CBD) respectivel...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/erkp7d |
| Summary: | 碩士 === 國立中正大學 === 光機電整合工程研究所 === 103 === In this study, graphene was grown on copper foil by chemical vapour deposition (CVD) and transferred onto glass substrate. Then, TiO2 and Sb2S3 semiconductor thin film were deposited onto graphene by drop casting and chemical bath deposition (CBD) respectively. The responsivity of graphene on UV light and visible light was increased with this enhancement. The effect of different casted TiO2 layers on the responsivity of the device was studied. The optimized device was defined. The most suitable responsive wavelength and responsivity of the device were measured by full-spectrum technique. The best responsivity and time response of the optimized device were determined by Xenon (Xe) lamp, Light Emitting Diode (LED) and Laser. Irradiated light with 405 nm and 1 μW by Xe lamp showed best responsivity which is 560 A/W, whereas 405 nm and 45 mW of Laser beam showed shortest rising and falling time which are 0.74 s and 37 s respectively. The deposition of TiO2 and Sb2S3 semiconductor on graphene photodetector was proven increasing the responsivity of the device and successfully fabricated.
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