| Summary: | 碩士 === 國立中正大學 === 光機電整合工程研究所 === 103 === Various layers of cadmium sulfide (CdS) thin film was deposited on chemical vapor deposited (CVD) graphene by Successive Ionic Layer Adsorption and Reaction (SILAR) method to overcome the shortcoming of CVD graphene on photodetection. The effect on responsivity of CdS/graphene composite material by different deposited layers of CdS (5L, 10L, 15L, and 20L) was studied. The photoreactions of various layers of CdS thin films on the light with wavelength of 405 nm by different light sources, which are Xenon (Xe) lamp, Light Emitting Diode (LED), and Laser were studied. The 15L CdS/graphene composite photodetector showed significant enhanced photoreaction under 405 nm Laser illumination, where its photocurrent has increased by 81.3%, and its rising time and falling time were measured as 1.03 s and 1.35 s respectively. The responsivity of the device was measured by Xe lamp full-spectral response measurements between 300 nm to 500 nm found to be 200 A/W. Thus, CdS/graphene composite is proven increasing the photo absorption capability and photoresponse of graphene.
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