Design and Comparative Study of 28nm ULV Bit-Interleaved SRAM Cells

碩士 === 國立中正大學 === 電機工程研究所 === 103

Bibliographic Details
Main Authors:	Xuan-Yu Lin, 林軒宇
Other Authors:	Jinn-Shyan Wang
Format:	Others
Language:	zh-TW
Published:	2015
Online Access:	http://ndltd.ncl.edu.tw/handle/dx7498

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spelling	ndltd-TW-103CCU004421032019-05-15T22:08:03Z http://ndltd.ncl.edu.tw/handle/dx7498 Design and Comparative Study of 28nm ULV Bit-Interleaved SRAM Cells 可以位元交錯擺放之二八奈米超低電壓靜態隨機存取記憶體之設計與比較研究 Xuan-Yu Lin 林軒宇碩士國立中正大學電機工程研究所 103 Jinn-Shyan Wang 王進賢 2015 學位論文 ; thesis 55 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 國立中正大學 === 電機工程研究所 === 103
author2	Jinn-Shyan Wang
author_facet	Jinn-Shyan Wang Xuan-Yu Lin 林軒宇
author	Xuan-Yu Lin 林軒宇
spellingShingle	Xuan-Yu Lin 林軒宇 Design and Comparative Study of 28nm ULV Bit-Interleaved SRAM Cells
author_sort	Xuan-Yu Lin
title	Design and Comparative Study of 28nm ULV Bit-Interleaved SRAM Cells
title_short	Design and Comparative Study of 28nm ULV Bit-Interleaved SRAM Cells
title_full	Design and Comparative Study of 28nm ULV Bit-Interleaved SRAM Cells
title_fullStr	Design and Comparative Study of 28nm ULV Bit-Interleaved SRAM Cells
title_full_unstemmed	Design and Comparative Study of 28nm ULV Bit-Interleaved SRAM Cells
title_sort	design and comparative study of 28nm ulv bit-interleaved sram cells
publishDate	2015
url	http://ndltd.ncl.edu.tw/handle/dx7498
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Design and Comparative Study of 28nm ULV Bit-Interleaved SRAM Cells

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