Design of Millimeter-Wave Beamforming Transmitter Array Front-End in Integrated CMOS and Silicon IPD Technology

• Main Authors: Yang,Chun-Ho, 楊竣賀
• Other Authors: Chang,Sheng-Fu
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/k4q7fy

碩士 === 國立中正大學 === 電機工程研究所 === 103 === In this thesis, an integrated CMOS/Si-IPD millimeter-wave beamforming transmitter array is developed. The beamforming transmitter array is composed of a CMOS 360° beamfomer and Si-IPD 1×4 bow-tie antenna array, where the CMOS chips are flip-chip mounted on the IPD substrate. The beamformer consists of a 180° reflection-type phase shifter, 0o/180o phase inverter, Marchand balun, gain amplifier and driver amplifier, which are implemented in 90-nm CMOS. The measurement results show that it achieves a continuous a phase tuning range greater than 360°, measured gain of 9.5 dB, input P1dB of -4 dBm, output power of 4.7dBm and Psat of 7.2 dBm at 56 GHz with dc power consumption of 153 mW. The chip size is 1.8 0.6 mm2. The 1×4 bow-tie antenna array is implemented in Si-IPD process. The ground current resonance blocking method is proposed to reduce antenna mutual coupling effect, where the experiment demonstrates less than -34 dB coupling. Finally, the electrical model of soldering gold bump is extracted and transition matching is designed for flip-chip integration of CMOS chips and Si-IPD antennas.