| Summary: | 博士 === 國防大學理工學院 === 國防科學研究所 === 103 === For both military and civilian technology, the excellent features of aluminum gallium nitride/gallium nitride high electron mobility transistor (AlGaN/GaN HEMT) crucial in radar, satellite, telecommunications and other high-frequency, high-power application, that also make the reliability of the HEMT affect the proper rate and lifetime costs of equipments. However, the serious problems of self heating and environmental surge attack have deeply declined the HEMT’s reliability. For this reason, the integration of the flip chip technology and surge protection devices used in HEMTs are good solutions to improve and enhance the reliability of key components of the system. Furthermore, developing new surge protection devices to adapt the Intentional Electromagnetic Interference (IEMI) is also a great contribution to these crucial devices. At the beginning of this study, AlN-submount flip-chip technology and AlGaN/GaN MSM-2DEG varactor are integratd with HEMTs to enhance the reliability. Furthermore, the realization of AlGaN/GaN MSM-2DEG varactor with dielectric for offering benefits of both high capacitance ratios and leakage-current suppression makes it useful in future surge protection of the preamplier. Finally, developing a new gas discharge tube with ZnO coating, which combines rapid response to surge and current carrying capacity, can improve the suppression of the rapid surge attacks such as the intentional electromagnetic interference (IEMI), and also enhance the reliability of these crucial components of the system.
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