A High-Efficiency Low-Ripple Charge Pump Using Variable Frequency Modulation Control

• Main Authors: Zong-You Wu, 吳宗祐
• Other Authors: Roger Yubtzuan Chen
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/48725441907942004161

碩士 === 國立雲林科技大學 === 電子工程系 === 102 === A high-efficiency low-ripple charge pump (CP) circuit is realized in a 0.35-μm CMOS technology with a power supply of 3.3-V. The charge pump exploits a variable frequency modulation control scheme to achieve both smaller output ripple voltages and better power efficiency. The variable-frequency control block is composed of an error amplifier, a compensator and a voltage-controlled ring oscillator (VCO). Through the shunt feedback, the VCO generates an operating frequency proportional to the CP output voltage. The tuning range of the VCO is from 118-kHz to 1-MHz. When the load current is varied from 3-mA to 30-mA, this CP generates output voltages between 5.8-V to 5-V. The simulated power efficiency lies between 80% to 74% and the simulated output ripples 9.1-mV are less than. The employed off-chip flying capacitor and load capacitor are 330-nF and 2.2-μF, respectively.